Structure and method for multi-threshold voltage adjusted silicon germanium alloy devices with same silicon germanium content

A semiconductor structure comprising:

• a first fin structure having a first strain and located directly on a surface of a first insulator layer portion and within a first device region of a substrate, wherein said first fin structure comprises, from bottom to top, a first doped silicon germanium alloy fin portion having a first germanium content and a silicon germanium alloy fin portion having a third germanium content;
• and
• a second fin structure having a second strain and located directly on a surface of a second insulator layer portion and within a second device region of said substrate, wherein said second insulator layer portion is spaced apart from said first insulator layer portion and said second fin structure comprises, from bottom to top, a second doped silicon germanium alloy fin portion having a second germanium content and a silicon germanium alloy fin portion having said third germanium content, wherein said first germanium content is different from said second germanium content and said third germanium content is greater than said first and second germanium contents, and wherein said first strain is different from said second strain.