High efficiency FinFET diode

A method of forming a device, comprising:

• providing a semiconductor substrate doped to have either a first conductivity type or a second conductivity type opposite the first conductivity type;
• forming a first group and a second group of elongated semiconductor fin structures over the substrate, the first and second groups being spaced apart;
• after forming the first and second groups of fin structures, forming first and second groups of one or more semiconductor strips epitaxially over the first and second groups of fin structures, respectively;
• doping the first group of one or more semiconductor strips to have the first conductivity type;
• and
• doping the second group of one or more semiconductor strips to have the second conductivity type.

A method of forming a device, comprising:

• providing a substrate doped to have a first conductivity type;
• forming a first plurality of fin structures over the substrate, each fin structure in the first plurality of fin structures having a semiconductor strip of the first conductivity type extending lengthwise thereon;
• forming a second plurality of fin structures over the substrate, the second plurality of fin structures being spaced from the first plurality of fin structures, and each fin structure in the second plurality of fin structures having a semiconductor strip of a second conductivity type extending lengthwise thereon, wherein the second conductivity type is opposite of the first conductivity type, wherein the semiconductor strips are formed integrally with the fin structures of the first and second pluralities of fin structures by epitaxial growth;
• forming a first structure upon and perpendicularly traversing both the first and second plurality of fin structures;
• and
• forming a second structure formed upon and perpendicularly traversing both the first and second plurality of fin structures, the second structure being spaced from the first structure.