Semiconductor device and radio frequency module formed on high resistivity substrate
AssigneeDongbu HiTek Co., Ltd.
InventorYong Soo Cho
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Abstract
In embodiments, a semiconductor device includes a high resistivity substrate, a transistor disposed on the high resistivity substrate, and a deep trench device isolation region disposed in the high resistivity substrate to surround the transistor. Particularly, the high resistivity substrate has a first conductive type, and a deep well region having a second conductive type is disposed in the high resistivity substrate. Further, a first well region having the first conductive type is disposed on the deep well region, and the transistor is disposed on the first well region.
Claims18
A semiconductor device comprising:
- a high resistivity substrate having a first conductivity type;
- a deep having a second conductivity type and disposed in the high resistivity substrate;
- a first well region having the first conductivity type and disposed on the deep well region;
- a transistor disposed on the first well region;
- a deep trench device isolation rein disposed in the high resistivity substrate to surround the transistor;
- a second well region having the second conductivity type and disposed outside the deep trench device isolation region;
- and
- a second high concentration impurity region having the second conductivity type disposed on the second well region.
A semiconductor device comprising:
- a high resistivity substrate having a first conductive type;
- a deep well region having a second conductive type and disposed in the high resistivity substrate;
- a first, well region having the first conductive type and disposed on the deep well region;
- a plurality of transistors disposed on the first well region;
- and
- a deep trench device isolation region having a ring shape to surround the plurality of transistors and disposed deeper than the deep well region.
The semiconductor device of 14, wherein second deep trench device isolation region is disposed outside the second well region;
- a third well region having the first conductive type is disposed outside the second deep trench device isolation region;
- and
- a third high concentration impurity region having the first conductive type is disposed on the third well region.
A radio frequency (RF) module comprising:
- an RF switching device disposed on a high resistivity substrate;
- an RF active device disposed on the high resistivity substrate;
- an RF passive device disposed on the high resistivity substrate;
- and
- a control device disposed on the high resistivity substrate,
- wherein at least one of the RF switching device and the RF active device comprises:
- a transistor disposed on the high resistivity substrate;
- and
- a deep trench device isolation region disposed in the high resistivity substrate to surround the transistor.
A semiconductor device comprising:
- a high resistivity substrate having a first conduct type;
- a deep well region having a second conductive type and disposed in the high resistivity substrate;
- a first well region having the first conductive type and disposed on the deep well region;
- a transistor disposed on the first well region;
- a deep trench device isolation region disposed in the high resistivity substrate to surround the transistor;
- a second well region having the first conductive type and disposed outside the deep trench device isolation region;
- and
- a second high concentration impurity region having the first conductive type and disposed on the second well region.
Dependencies are inferred from the claim text.