Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsTeruyuki Ohashi, Yuichiro Mitani, Tatsuo Shimizu, Ryosuke Iijima
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Abstract
A semiconductor device of an embodiment includes a SiC layer having a surface, the surface inclined at an angle of 0° to 10° with respect to a {000-1} face or the surface having a normal line direction inclined at an angle of 80° to 90° with respect to a <000-1> direction, a gate electrode, a gate insulating layer provided between the surface and the gate electrode, and a region provided between the surface and the gate insulating layer, a maximum concentration of deuterium (D) in the region being 1×1020 cm−3 or more and a maximum concentration of hydrogen (H) in the region being 1×1019 cm−3 or less.
Claims18
A semiconductor device comprising:
- a SiC layer having a surface, the surface inclined at an angle of 0° to 10° with respect to a {000-1} face or the surface, having a normal line direction inclined at an angle of 80° to 90° with respect to a <000-1> direction;
- a gate electrode;
- a gate insulating layer provided between the surface and the gate electrode;
- and
- a region provided between the surface and the gate insulating layer, a maximum concentration of deuterium (D) in the region being 1×1020 cm−3 or more and a maximum concentration of hydrogen (H) in the region being 1×1019 cm−3 or less.
A method for manufacturing a semiconductor device comprising:
- forming a gate insulating layer on a surface of a SiC layer, the surface inclined at an angle of 0° to 10° with respect to a {000-1} face, or, the surface having a normal line direction inclined at an angle of 80° to 90° with respect to a <000-1> direction;
- performing first heat treatment in an atmosphere containing deuterium after forming the gate insulating layer;
- and
- forming a gate electrode on the gate insulating layer after performing the first heat treatment.
A method for manufacturing a semiconductor device comprising:
- forming a gate insulating layer on a surface of a SiC layer, the forming the gate insulating layer including thermally-oxidizing the surface in an atmosphere containing deuterium and oxygen, the surface inclined at an angle of 0° to 10° with respect to a {000-1}face, or the surface having a normal line direction inclined at an angle of 80° to 90° with respect to a <000-1> direction;
- and
- forming a gate electrode on the gate insulating layer.
Dependencies are inferred from the claim text.