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US 9,755,061 B2Granted
Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier
AssigneeFujitsu Limited
InventorsShirou Ozaki, Naoya Okamoto
Life of this patent
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Abstract
A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than an oxygen concentration of a region near an interface with a region of the insulating film other than below the gate electrode.
Claims9
A semiconductor device comprising:
- a nitride semiconductor multilayer;
- a source electrode and a drain electrode disposed on the nitride semiconductor multilayer;
- a capping layer disposed on the nitride semiconductor multilayer between the source electrode and the drain electrode;
- an insulating film disposed on the capping layer between the source electrode and the drain electrode;
- and
- a gate electrode disposed on the insulating film,
- wherein the capping layer has
- a first oxidized region near the insulating film below the gate electrode and
- a second oxidized region near the insulating film except directly below the gate electrode,
- the first oxidized region having an oxygen concentration higher than an oxygen concentration of the second oxidized region, and
- wherein the insulating film includes a lower oxide insulating film or a lower oxynitride insulating film disposed not directly below the gate electrode and an upper oxide insulating film or an upper oxynitride insulating film disposed on the lower oxide insulating film or the lower oxynitride insulating film and on a region of the nitride semiconductor multilayer below the gate electrode.
8 more elements
A power supply device comprising:
- a primary power supply circuit including a transistor;
- and
- a secondary power supply circuit insulated from the primary power supply circuit by a transformer,
- wherein the transistor includes:
- a nitride semiconductor multilayer,
- a source electrode and a drain electrode disposed on the nitride semiconductor multilayer,
- a capping layer disposed on the nitride semiconductor multilayer between the source electrode and the drain electrode,
- an insulating film disposed on the capping layer between the source electrode and the drain electrode, and
- a gate electrode disposed on the insulating film,
- wherein the capping layer has
- a first oxidized region near the insulating film below the gate electrode and
- a second oxidized region near the insulating film except directly below the gate electrode,
- the first oxidized region having an oxygen concentration higher than an oxygen concentration of the second oxidized region, and
- wherein the insulating film includes a lower oxide insulating film or a lower oxynitride insulating film disposed not directly below the gate electrode and an upper oxide insulating film or an upper oxynitride insulating film disposed on the lower oxide insulating film or the lower oxynitride insulating film and on a region of the nitride semiconductor multilayer below the gate electrode.
11 more elements
A high-frequency amplifier comprising:
- a digital pre-distortion circuit configured to compensate for a nonlinear distortion of an input signal;
- a mixer connected to the digital pre-distortion circuit and configured to mix an AC signal with the input signal whose nonlinear distortion is compensated for;
- and
- an amplifier connected to the mixer and configured to amplify the input signal mixed with the AC signal, the amplifier including a transistor,
- wherein the transistor includes:
- a nitride semiconductor multilayer,
- a source electrode and a drain electrode disposed on the nitride semiconductor multilayer,
- a capping layer disposed on the nitride semiconductor multilayer between the source electrode and the drain electrode,
- an insulating film disposed on the capping layer between the source electrode and the drain electrode, and
- a gate electrode disposed on the insulating film,
- wherein the capping layer has
- a first oxidized region near the insulating film below the gate electrode and
- a second oxidized region near the insulating film except directly below the gate electrode,
- the first oxidized region having an oxygen concentration higher than an oxygen concentration of the second oxidized region, and
- wherein the insulating film includes a lower oxide insulating film or a lower oxynitride insulating film disposed not directly below the gate electrode and an upper oxide insulating film or an upper oxynitride insulating film disposed on the lower oxide insulating film or the lower oxynitride insulating film and on a region of the nitride semiconductor multilayer below the gate electrode.
12 more elements
Dependencies are inferred from the claim text.