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US 9,755,058 B2Granted
Surface devices within a vertical power device
AssigneeD3 Semiconductor LLC
InventorsThomas E. Harrington, III, Zhijun Qu
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises one or more lateral devices that are electrically active along a top surface of the semiconductor device.
Claims27
A semiconductor device comprising:
- a vertical power device that is electrically active along a vertical axis of the semiconductor device and that has at least one primary electrical terminal on the back surface of the semiconductor device;
- a surface device comprising one or more lateral devices that are electrically active along a top surface of the semiconductor device;
- and,
- wherein the surface device is configured to control the vertical power device.
1 more element
A semiconductor device comprising:
- a vertical power device that is electrically active along a vertical axis of the semiconductor device and forms an insulated gate bipolar transistor (IGBT) that has a collector terminal on the back surface of the semiconductor device;
- a surface device comprising one or more lateral devices that are electrically active along a top surface of the semiconductor device;
- and,
- wherein the surface device is configured to control the vertical power device.
1 more element
A semiconductor device comprising:
- a vertical power device that is electrically active along a vertical axis of the semiconductor device and forms a diode that has a cathode terminal on the back surface of the semiconductor device;
- a surface device comprising one or more lateral devices that are electrically active along a top surface of the semiconductor device;
- and,
- wherein the surface device is configured to control the vertical power device.
1 more element
A semiconductor device comprising:
- a vertical power device that is electrically active along a vertical axis of the semiconductor device and that has at least one primary electrical terminal on the back surface of the semiconductor device;
- a surface device comprising one or more lateral devices that are electrically active along a top surface of the semiconductor device;
- wherein the one or more lateral devices include one or more of an N-type MOS (NMOS) transistor, a P-type MOS (PMOS) transistor, a Lateral-Drift MOS (LDMOS) transistor, an NPN bipolar junction transistor (NPN), a PNP bipolar junction transistor (PNP), a floating-gate MOS transistor, a diode, a resistor, a capacitor, an inductor, and a fusible element;
- and,
- wherein the surface device is configured to control the vertical power device.
2 more elements
Dependencies are inferred from the claim text.