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US 9,755,057 B1Granted
Method of fabricating a semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsPo-Wen Su, Shui-Yen Lu
Life of this patent
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Abstract
A method of fabricating a semiconductor device is disclosed. A substrate is provided. A dummy gate stack is formed on the substrate. The dummy gate stack includes a gate dielectric layer and an amorphous silicon dummy gate on the gate dielectric layer. The amorphous silicon dummy gate is transformed into a nano-crystalline silicon dummy gate. A spacer is formed on a sidewall of the nano-crystalline silicon dummy gate. A source/drain region is formed in the substrate on either side of the dummy gate stack.
Claims8
A method of fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a dummy gate stack on the substrate, the dummy gate stack comprising a gate dielectric layer and an amorphous silicon dummy gate on the gate dielectric layer;
- transforming the amorphous silicon dummy gate into a nano-crystalline silicon dummy gate;
- forming a spacer on a sidewall of the nano-crystalline silicon dummy gate;
- and
- forming a source/drain region in the substrate on either side of the dummy gate stack.
3 more elements
Dependencies are inferred from the claim text.