Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMasumi Saitoh, Toshinori Numata, Yukio Nakabayashi
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Abstract
A semiconductor device manufacturing method of an embodiment includes the steps of: forming a first insulating layer on a semiconductor substrate; forming on the first insulating layer an amorphous or polycrystalline semiconductor layer having a narrow portion; forming on the semiconductor layer a second insulating layer having a thermal expansion coefficient larger than that of the semiconductor layer; performing thermal treatment; removing the second insulating layer; forming a gate insulating film on the side faces of the narrow portion; forming a gate electrode on the gate insulating film; and forming a source-drain region in the semiconductor layer.
Claims11
A semiconductor device, comprising:
- a first insulating layer;
- a gate electrode layer provided on the first insulating layer;
- a second insulating layer provided on the gate electrode layer;
- a columnar inner insulating layer extending in a stacking direction of the first insulating layer, the gate electrode layer and the second insulating layer;
- a third insulating layer provided between the gate electrode layer and the columnar inner insulating layer;
- and
- a polycrystalline semiconductor layer provided between the third insulating layer and the columnar inner insulating layer,
- wherein a crystal lattice spacing of the polycrystalline semiconductor layer in the stacking direction is larger than a crystal lattice spacing in a non-distorted state.
Dependencies are inferred from the claim text.