Thin film transistor and method of manufacturing the same
AssigneeSamsung Display Co., Ltd.
InventorsMyung Kwan Ryu, Ki Hwan Kim, Kap Soo Yoon, Hyeon Jun Lee, Jeong Uk Heo
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Display Co., Ltd.
InventorsMyung Kwan Ryu, Ki Hwan Kim, Kap Soo Yoon, Hyeon Jun Lee, Jeong Uk Heo
Estimating the term…
There are provided a method of manufacturing a thin film transistor and a display including a thin film transistor. The method of manufacturing a thin film transistor includes forming a barrier layer cm a substrate, forming a semiconductor layer on the barrier layer, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, forming an offset region on an external surface of the gate electrode through a plasma heat treatment process or an annealing process, etching, an offset region of the gate electrode, etching a gate insulating layer except for a portion of the gate insulating layer, positioned below the gate electrode, forming an interlayer insulating layer on the gate electrode, and etching, the interlayer insulating layer to form a source electrode and a drain electrode.
A method of manufacturing a thin film transistor, the method comprising:
A thin film transistor comprising:
Dependencies are inferred from the claim text.