Semiconductor devices including active patterns having different pitches and methods of fabricating the same

A method of fabricating a semiconductor device, comprising:

• sequentially stacking hardmask layers, a first sacrificial layer, and a second sacrificial layer on a substrate;
• etching the second sacrificial layer using a first photoresist pattern fanned on the second sacrificial layer as an etching mask to form first mandrels;
• forming first spacers on side walls of the first mandrels;
• forming a second photoresist pattern in a region from which the first mandrels have been removed, spaced apart from the first spacers, and having a line width greater than a line width of the first spacers;
• etching the first sacrificial layer using the first spacers and the second photoresist pattern as respective etching masks to form second mandrels and a third mandrel, respectively, having different line widths;
• forming second spacers on side walls of the second mandrels and third spacers on side walls of the third mandrel;
• etching the hardmask layers using the second spacers and the third spacers having different pitches as an etching mask to form a hardmask pattern;
• etching the substrate using the hardmask pattern as an etching mask to form first active patterns having a first pitch and second active patterns having a second pitch greater than the first pitch;
• and
• forming a device isolation layer so that upper portions of the first active patterns and the second active patterns protrude therefrom.

A method of manufacturing a semiconductor device, comprising:

• sequentially stacking hardmask layers, a first sacrificial layer, and a second sacrificial layer on a substrate having a first region and a second region;
• forming a first photoresist pattern on the second sacrificial layer in the first region;
• etching the second sacrificial layer using the first photoresist pattern as an etching mask to form first mandrels on the first sacrificial layer in the first region;
• forming first spacers on side walls of the first mandrels in the first region;
• forming a second photoresist pattern on the first sacrificial layer in the first region, to be spaced apart from the first spacers and disposed outside a region from which the first mandrels have been removed, and forming a third photoresist pattern and a forth photoresist pattern having different line widths on the first sacrificial layer in the second region;
• etching the first sacrificial layer using the first spacer and the second photoresist pattern as respective etching masks to form a second mandrel and a third mandrel, respectively, in the first region;
• etching the first sacrificial layer using the third photoresist pattern and the fourth photoresist pattern as respective etching masks to form a forth mandrel and a fifth mandrel, respectively, in the second region;
• forming second to fifth spacers on side walls of the second to fifth mandrels;
• forming first active patterns having a first pitch in the first region, second active patterns having a second pitch greater than the first pitch in the first region, third active patterns having a third pitch in the second region, and fourth active patterns having a fourth pitch greater than the third pitch in the second region, by etching the hardmask layer and at least a portion of the substrate using the second to fifth spacers as respective etching masks;
• and
• forming a device isolation layer so that upper portions of the first to fourth active patterns protrude therefrom,
• wherein a line width of each of the second to fourth photoresist patterns is greater than a line width of the first spacer, and a line width of the fourth photoresist pattern is greater than a line width of each of the second and third photoresist patterns.