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US 9,755,048 B2Granted
Patterned structure of a semiconductor device and a manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorsRai-Min Huang, I-Ming Tseng, Tong-Jyun Huang, Kuan-Hsien Li
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Abstract
A patterned structure of a semiconductor device includes a substrate, a first feature and a second feature. The first feature and the second feature are disposed on the substrate, and either of which includes a vertical segment and a horizontal segment. There is a distance between the vertical segment of the first feature and the vertical segment of the second feature, and the distance is less than the minimum exposure limits of an exposure apparatus.
Claims10
A patterned structure of a semiconductor device, comprising:
- a substrate;
- a first fin-shaped feature disposed on the substrate, wherein the first fin-shaped feature comprises a first segment extending in a first direction and a second segment extending in a second direction perpendicular to the first segment, wherein both of the first direction and the second direction are parallel to the substrate;
- a second fin-shaped feature disposed adjacent to the first fin-shaped feature on the substrate, wherein the second fin-shaped feature comprises a third segment extending in the first direction and adjacent to the first segment and a fourth segment extending in the second direction, and a distance between the first segment of the first fin-shaped feature and the third segment of the second fin-shaped feature is less than a minimum feature size generated by an exposure apparatus that produces structures with the minimum feature size;
- and
- a dummy structure completely overlaps the first segment of the first fin-shaped feature and the third segment of the second fin-shaped feature and partially overlaps the second segment of the first fin-shaped feature and the fourth segment of the second fin-shaped feature.
2 more elements
Dependencies are inferred from the claim text.