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US 9,755,046 B2Granted
Method of forming semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsShih-Yin Hsiao, Ching-Chung Yang
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Abstract
A method of forming a semiconductor device is provided. At least two shallow trenches are formed in a substrate. An insulating layer is formed on surfaces of the substrate and the shallow trenches. A conductive layer is formed on the substrate between the shallow trenches. At least one spacer is formed on a sidewall of the conductive layer, wherein the spacer fills up each shallow trench.
Claims10
A method of forming a semiconductor device, comprising:
- forming at least two shallow trenches in a substrate;
- forming an insulating layer on surfaces of the substrate and the shallow trenches;
- forming a conductive layer on the substrate between the shallow trenches;
- and
- forming at least one spacer on a sidewall of the conductive layer, wherein the shallow trenches are completely filled with the at least one spacer.
2 more elements
Dependencies are inferred from the claim text.