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US 9,755,044 B2Granted
Method of manufacturing a transistor with oxidized cap layer
AssigneeDelta Electronics, Inc.
InventorWen-Chia Liao
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate, a channel layer, a spacer layer, a barrier layer, and an oxidized cap layer. The channel layer is disposed on or above the substrate. The spacer layer is disposed on the channel layer. The barrier layer is disposed on the spacer layer. The oxidized cap layer is disposed on the barrier layer. The oxidized cap layer is made of oxynitride.
Claims14
A method for manufacturing a semiconductor device, comprising:
- forming a channel layer on or above a substrate, wherein a two dimensional electron gas channel exists in the channel layer;
- forming a spacer layer on the channel layer, wherein the spacer layer is in contact with the channel layer;
- forming a barrier layer on the spacer layer, wherein the barrier layer is in contact with the spacer layer;
- forming a cap layer on the barrier layer, wherein the spacer layer, the barrier layer and the cap layer are made of different materials;
- the spacer layer is an etching stop layer during a barrier layer etching process;
- the barrier layer is an etching stop layer during a cap layer etching process;
- oxidizing the cap layer to form an oxidized cap layer on the barrier layer, wherein the oxidized cap layer is in contact with the barrier layer and made of oxynitride;
- and
- forming a passivation layer on the oxidized cap layer and forming at least a portion of the passivation layer between the oxidized cap layer and the gate electrode.
6 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a channel layer on or above a substrate, wherein a two dimensional electron gas channel exists in the channel layer;
- forming a spacer layer on the channel layer, wherein the spacer layer is in contact with the channel layer;
- forming a barrier layer on the spacer layer, wherein the barrier layer is in contact with the spacer layer;
- forming a cap layer on the barrier layer, wherein the spacer layer, the barrier layer and the cap layer are made of different materials;
- the spacer layer is an etching stop layer during a barrier layer etching process;
- the barrier layer is an etching stop layer during a cap layer etching process;
- forming a first recess in the cap layer by etching the cap layer;
- forming a second recess in the barrier layer by etching the barrier layer to expose a portion of the spacer layer;
- and
- oxidizing the cap layer and the exposed spacer layer to form an oxidized cap layer and an oxidation segment, wherein the oxidized cap layer and the oxidation segment are made of different materials and the oxidized cap layer is in contact with the barrier layer and made of oxynitride.
7 more elements
Dependencies are inferred from the claim text.