Semiconductor device and method of manufacturing semiconductor device

A semiconductor device comprising:

• an N-type silicon substrate including an anode layer made of P-type silicon on a first surface and a cathode layer made of N-type silicon on a second surface opposite the first surface;
• a first electrode film made of titanium formed directly on the cathode layer, the first electrode film forming a Si—Ti junction, titanium silicide not formed between the first electrode film and the cathode layer;
• a second electrode film made of Al—Si formed on the first electrode film;
• and
• a third electrode film made of Ni formed on the second electrode film.

A semiconductor device comprising:

• a silicon substrate including an N-type silicon layer on one surface and at least one of a PN junction, an electrode film, and a protective film on another surface;
• a first electrode film made of titanium formed on the N-type silicon layer, the first electrode film forming a Si—Ti junction, titanium silicide not formed between the first electrode film and the N-type silicon layer;
• a second electrode film made of Al—Si formed on the first electrode film;
• and
• a third electrode film made of Ni formed on the second electrode film,
• wherein the silicon substrate is a P-type silicon substrate, the N-type silicon layer is formed on one surface of the P-type silicon substrate, another N-type silicon layer is formed on another surface of the P-type silicon substrate.