Platinum-containing constructions

#Platinum-containing constructions, and methods of forming platinum-containing constructions.

#Platinum may have application for utilization in semiconductor constructions; and, for instance, may have application in integrated circuitry and/or micro-electro-mechanical systems (MEMS).

#Platinum is a noble metal, and thus non-reactive relative to numerous materials commonly utilized in semiconductor constructions. Such non-reactivity can be beneficial. For instance, some memory cells utilize oxygen-containing programmable materials between a pair of electrically conductive electrodes (such memory cells may be utilized in, for example, resistive random-access memory [RRAM]). Unfortunately, the programmable materials can problematically react with many of the commonly-available conductive materials. However, the utilization of platinum in the electrodes can alleviate, or even eliminate, problematic reaction with the programmable materials.

#FIGS. 1-4 are diagrammatic, cross-sectional views of a construction illustrating process stages of an example embodiment method.

#FIG. 5 is a diagrammatic, cross-sectional view of the construction of FIG. 1 shown at a process stage subsequent to that of FIG. 3, and alternative to that of FIG. 4.

#FIGS. 6-11 are diagrammatic, cross-sectional views of a construction illustrating process stages of another example embodiment method.

#In some embodiments, platinum-containing material is formed along metal oxide, and subsequently the platinum-containing material is subjected to chemical-mechanical polishing (CMP). The utilization of the metal oxide may lead to reduced surface roughness across the platinum relative to processes which do not utilize the metal oxide. For instance, the utilization of the metal oxide may enable the chemical-mechanical polished platinum to have a surface roughness of less than 50 Å (as measured as the root mean square roughness by atomic force microscopy), whereas omission of the metal oxide may lead to the chemical-mechanical polished platinum having a surface roughness of at least about 100 Å (as measured as the root mean square roughness by atomic force microscopy). Also, the utilization of the metal oxide may improve retention of the platinum-containing material within openings in a semiconductor construction as compared to processes which do not utilize the metal oxide.

#Any suitable metal oxide may be utilized. The term “metal” is used herein to refer to traditional metals, and not to semiconductors (for instance, silicon). In some embodiments, the metal oxide may comprise one or more transition metals; and in some embodiments the metal oxide may comprise, consist essentially of, or consist of one or more of aluminum oxide, hafnium oxide, zirconium oxide and titanium oxide.

#Example embodiments are described with reference to FIGS. 1-15.