Trench epitaxial growth for a FinFET device having reduced capacitance

An integrated FinFET transistor circuit, comprising:

• a fin of semiconductor material;
• a dielectric material on each side of a bottom portion of said fin;
• an oxide material on each side of said fin above the dielectric material;
• a transistor gate electrode extending over a channel region of said fin;
• sidewall spacers on each side of the transistor gate electrode;
• wherein said fin further includes a recessed region on each side of the channel region, with said oxide material on each side of each recessed region in the fin;
• a raised source region of epitaxial growth material filling said recessed region and extending from said fin on a first side of the transistor gate electrode to cover the oxide material to a height above said fin and in contact with the sidewall spacer;
• and
• a raised drain region of said epitaxial growth material filling said recessed region and extending from said fin on a second side of the transistor gate electrode to cover the oxide material to said height above said fin and in contact with the sidewall spacer;
• wherein the sidewall spacers extend on each side of the fin above the bottom portion, and wherein the oxide material on each side of each recessed region in the fin is positioned above said sidewall spacers.

An integrated FinFET transistor circuit, comprising:

• a fin of semiconductor material;
• a transistor gate electrode extending over a channel region of said fin;
• a sidewall spacer on a side of the transistor gate electrode;
• wherein said fin further includes a recessed region;
• an oxide material on each side of the recessed region;
• a raised region of epitaxial growth material filling said recessed region and extending from said fin to cover the oxide material to a height above said fin and in contact with the sidewall spacer;
• wherein said height is greater than a height of the transistor gate electrode.

An integrated FinFET transistor circuit, comprising:

• a fin of semiconductor material;
• a transistor gate electrode extending over a channel region of said fin;
• sidewall spacers on each side of the transistor gate electrode;
• wherein said fin further includes a recessed region on each side of the channel region;
• an oxide material on each side of each recessed region in the fin, wherein the sidewall spacers extend underneath the oxide material;
• a raised source region of epitaxial growth material filling said recessed region and extending from said fin on a first side of the transistor gate electrode to cover the oxide material to a height above said fin and in contact with the sidewall spacer;
• and
• a raised drain region of said epitaxial growth material filling said recessed region and extending from said fin on a second side of the transistor gate electrode to cover the oxide material to said height above said fin and in contact with the sidewall spacer.

An integrated FinFET transistor circuit, comprising:

• a fin of semiconductor material;
• a transistor gate electrode extending over a channel region of said fin;
• sidewall spacers on each side of the transistor gate electrode;
• wherein said fin further includes a recessed region on each side of the channel region;
• an oxide material on each side of each recessed region in the fin;
• a raised source region of epitaxial growth material filling said recessed region and extending from said fin on a first side of the transistor gate electrode to cover the oxide material to a height above said fin and in contact with the sidewall spacer;
• a raised drain region of said epitaxial growth material filling said recessed region and extending from said fin on a second side of the transistor gate electrode to cover the oxide material to said height above said fin and in contact with the sidewall spacer;
• and
• a dielectric material on each side of a bottom portion of said fin, wherein said sidewall spacers extend on each side of the fin above the bottom portion, and wherein the oxide material on each side of each recessed region in the fin is positioned above said sidewall spacers.

An integrated FinFET transistor circuit, comprising:

• a fin of semiconductor material;
• a dielectric material on each side of a bottom portion of said fin;
• an oxide material on each side of said fin above the dielectric material;
• a transistor gate electrode extending over a channel region of said fin;
• sidewall spacers on each side of the transistor gate electrode;
• wherein said fin further includes a recessed region on each side of the channel region, with said oxide material on each side of each recessed region in the fin;
• a raised source region of epitaxial growth material filling said recessed region and extending from said fin on a first side of the transistor gate electrode to cover the oxide material to a height above said fin and in contact with the sidewall spacer;
• and
• a raised drain region of said epitaxial growth material filling said recessed region and extending from said fin on a second side of the transistor gate electrode to cover the oxide material to said height above said fin and in contact with the sidewall spacer;
• wherein a width of the raised source and drain regions increases with increased height of the raised source and drain regions, and said height is greater than a height of the transistor gate electrode.