Switch device performance improvement through multisided biased shielding
AssigneeQUALCOMM Incorporated
InventorSinan Goktepeli
Life of this patent
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Abstract
An integrated radio frequency (RF) circuit structure may include an active device on a first surface of an isolation layer. The integrated RF circuit structure may also include backside metallization on a second surface opposite the first surface of the isolation layer. A body of the active device is biased by the backside metallization. The integrated RF circuit structure may further include front-side metallization coupled to the backside metallization with a via. The front-side metallization is arranged distal from the backside metallization. The front-side metallization, the via, and the backside metallization may at least partially enclose the active device.
Claims9
An integrated radio frequency (RF) circuit structure comprising:
- an active device on a first surface of an isolation layer;
- a backside metallization on a second surface opposite the first surface of the isolation layer, in which a body of the active device is biased by the backside metallization;
- a front-side metallization coupled to the backside metallization with a via, and arranged distal from the backside metallization;
- the via, the front-side metallization and the backside metallization at least partially enclosing the active device;
- a handle substrate on a front-side dielectric layer on the active device and distal from the backside metallization;
- and
- an RF enhancement layer between the front-side dielectric layer and the handle substrate.
An integrated radio frequency (RF) circuit structure, comprising:
- an active device on a first surface of an isolation layer;
- a backside metallization on a second surface opposite the first surface of the isolation layer, in which a body of the active device is biased by the backside metallization;
- a front-side metallization coupled to the backside metallization with a via, and arranged distal from the backside metallization, wherein the via, the front-side metallization and the backside metallization at least partially enclose a gate of the active device;
- a handle substrate on a front-side dielectric layer on the active device;
- and
- an RF enhancement layer between the front-side dielectric layer and the handle substrate.
Dependencies are inferred from the claim text.