Transparent compound semiconductor and production method therefor
AssigneeRftron Co., Ltd.
InventorsKookrin Char, Jisoon Ihm
Life of this patent
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Abstract
The present invention relates to a transparent compound semiconductor and to a production method therefor, and is adapted to provide a transparent compound semiconductor of high stability and charge mobility while being transparent. The transparent compound semiconductor according to the present invention has a composition of Ba1−XLaXSnO3 (0<x<0.1) and has a charge mobility of at least 10 cm2/V·sec.
Claims7
A transparent compound semiconductor fabricated by reacting a Ba compound, an La compound, and an Sn compound, the transparent compound semiconductor comprising:
- a composition of Ba1−XLaXSnO3 (0<x<0.1),
- wherein
- a composition ratio of the Ba1−XLaXSnO3 is (Ba+La):Sn=1:1,
- the thickness of the Ba1−XLaXSnO3 is in the range of 0.4 nm to 400 nm, and
- the Ba1−XLaXSnO3 has a charge mobility of at least 10 cm2/V·sec or more at room temperature.
A transparent compound semiconductor fabricated by reacting a Ba compound, an La compound, and an Sn compound, the transparent compound semiconductor comprising:
- a composition of Ba1−XLaXSnO3 (0<x<0.1),
- wherein
- a composition ratio of the Ba1−XLaXSnO3 is (Ba+La):Sn=1:1,
- the Ba1−XLaXSnO3 is in the form of a single crystal or an epitaxial film, and
- the Ba1−XLaXSnO3 has a charge mobility of at least 10 cm2/V·sec or more at room temperature.
Dependencies are inferred from the claim text.