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US 9,755,023 B2Granted
Photoelectrochemical cell including Ga(Sbx)N1-x semiconductor electrode
AssigneesUniversity of Kentucky Research Foundation, University of Louisville Research Foundation, Inc.
InventorsMadhu Menon, Michael Sheetz, Mahendra Kumar Sunkara, Chandrashekhar Pendyala, Swathi Sunkara, Jacek B. Jasinski
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Abstract
The composition of matter comprising Ga(Sbx)N1−x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.
Claims23
A photoelectric cell, comprising:
- an electrolyte vessel;
- an electrolyte held in said vessel;
- a first semiconductor electrode in contact with said electrolyte, said first semiconductor electrode including a substrate with a first face and a first semiconductor layer of Ga(Sbx)N1−x where x=0.01 to 0.06 having a band gap between 2.4 and 1.7 eV in contact with the first face of the substrate;
- and
- a counter electrode in contact with said electrolyte.
2 more elements
A photoelectric cell, comprising:
- an electrolyte vessel;
- an electrolyte held in said vessel;
- a first semiconductor electrode in contact with said electrolyte, said first semiconductor electrode consisting essentially of a substrate with a first face and a first semiconductor layer of Ga(Sbx)N1−x where x=0.01 to 0.06 having a band gap between 2.4 and 1.7 eV in contact with the first face of the substrate;
- and
- a counter electrode in contact with said electrolyte.
2 more elements
Dependencies are inferred from the claim text.