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US 9,755,022 B2Granted
Epitaxial silicon wafer having reduced stacking faults
AssigneesSumco Techxiv Corporation, Sumco Corporation
InventorsTadashi Kawashima, Naoya Nonaka, Masayuki Shinagawa, Gou Uesono
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Abstract
An epitaxial silicon wafer includes a silicon wafer added with phosphorus so that resistivity of the silicon wafer falls at or below 0.9 mΩ·cm, an epitaxial film formed on a first side of the silicon wafer, and an oxidation film formed on a second side of the silicon wafer opposite to the first side, wherein an average number of Light Point Defect of a size of 90 nm or more observed on a surface of the epitaxial film is one or less per square centimeter.
Claims3
An epitaxial silicon wafer comprising:
- a silicon wafer added with red phosphorus so that resistivity of the silicon wafer falls at or below 0.9 mΩ·cm;
- an epitaxial film directly formed on a first side of the silicon wafer, wherein the uniformity of the resistivity in the plane of the epitaxial film is less than 9.6%;
- and an oxidation film formed on a second side of the silicon wafer opposite to the first side, wherein
- a total number of Light Point Defects, generated due to stacking faults, of a size of 90 nm or more observed on a surface of the epitaxial film is one or less per square centimeter.
1 more element
Dependencies are inferred from the claim text.