US 9,755,016 B2 · Integration process to form microelectronic or micromechanical structures

Abstract

The invention relates to transferring, in one exposure, a single-mask feature to form two features on an underlying material. Specifically, a doubled walled structure (i.e. a center opening flanked by adjacent openings) is formed. Advantageously, the openings may be sub-resolution openings. The center opening may be a line flanked by two other lines. The center opening may be circular and surrounded by an outer ring, thus forming a double wall ring structure. In an electronic fuse embodiment, the double wall ring structure is a via filled with a conductor that contacts a lower and upper level metal. In deep trench embodiment, the double wall ring structure is a deep trench in a semiconductor substrate filled with insulating material. In such a way the surface area of the trench is increased thereby increasing capacitance.

Claims20

Dependent claims

A double wall structure comprising:

a circular center opening in a material;
and
a lateral opening in the material around the center opening;
wherein the lateral opening has an outer wall and the lateral opening is separated from the center opening by an inner wall,
wherein the circular center opening is surrounded on all sides by the lateral opening, and
wherein the double wall structure comprises an electronic fuse.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/088,592Filed 1 Apr 2016 · division

Priority

10 Apr 2013

Published

US 2016/0322458 A13 Nov 2016

Granted

5 Sep 2017

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 62/117
Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies: shapes of semiconductor bodies
H10P 50/695
Characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane: characterised by the process involved…
H10P 50/73
Etching of wafers, substrates or parts of devices: using masks for insulating materials
H10P 76/4085
Characterised by their sizes, orientations, dispositions, behaviours or shapes: characterised by the processes involved to create the masks

Integration process to form microelectronic or micromechanical structures

Life of this patent

Integration process to form microelectronic or micromechanical structures

Life of this patent

Abstract

Claims20