Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth
AssigneeHitachi Power Semiconductor Device, Ltd.
InventorsKazuhiro Mochizuki, Hidekatsu Onose, Norifumi Kameshiro, Natsuki Yokoyama
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Abstract
A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to 4.4×1017 cm−3 or higher and 6×1017 cm−3 or lower and an impurity concentration in a second JTE region is set to 2×1017 cm−3 or lower in a case of a Schottky diode, and an impurity concentration in the first JTE region is set to 6×1017 cm−3 or higher and 8×1017 cm−3 or lower and an impurity concentration in the second JTE region is set to 2×1017 cm−3 or lower in a case of a junction barrier Schottky diode.
Claims6
A semiconductor device comprising:
- a hollow annular p-type JTE region disposed on a drift region having an n-type conductivity,
- wherein the annular p-type JTE region includes a first JTE region and a second JTE region each having a substantially equal impurity concentration in a vicinity of a substantially same junction depth,
- wherein the first JTE region is disposed so as to be sandwiched between portions of the second JTE region, and
- wherein a p-type semiconductor region is formed adjacent to an innermost portion of the annular p-type JTE region.
Dependencies are inferred from the claim text.