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US 9,755,013 B2Granted
High density capacitor structure and method
AssigneeGlobalfoundries Inc.
InventorsWai-Kin Li, Chengwen Pei, Ping-Chuan Wang
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Abstract
High density capacitor structures based on an array of semiconductor nanorods are provided. The high density capacitor structure can be a plurality of capacitors in which each of the semiconductor nanorods serves as a bottom electrode for one of the plurality of capacitors, or a large-area metal-insulator-metal (MIM) capacitor in which the semiconductor nanorods serve as a support structure for a bottom electrode of the MIM capacitor subsequently formed.
Claims13
A semiconductor structure comprising a plurality of capacitors, the plurality of capacitors comprising:
- a plurality of semiconductor nanorods present on and oriented perpendicular to a top surface of a semiconductor substrate;
- a conformal dielectric material layer present on exposed portions of the top surface of the semiconductor substrate and around sidewalls of the plurality of semiconductor nanorods;
- and
- a conductive material layer located on the conformal dielectric material layer, the conductive material layer laterally surrounding the plurality of semiconductor nanorods and having a top surface coplanar with a top surface of the conformal dielectric material layer, wherein the conductive material layer is entirely composed of an electrically conductive material.
1 more element
Dependencies are inferred from the claim text.