Semiconductor device and a method of manufacturing the same

A semiconductor device having a capacitor element comprising:

• (a) a first electrode of the capacitor element formed over a semiconductor substrate;
• (b) a capacitor insulating film of the capacitor element formed over the first electrode,
• wherein the capacitor insulating film includes an upper portion, a first middle portion and a first lower portion in a cross section of a first direction along an upper surface of the semiconductor substrate,
• wherein the upper portion of the capacitor insulating film is formed over the first electrode and extends along an upper surface of the first electrode,
• wherein the first lower portion of the capacitor insulating film is disposed below the upper portion of the capacitor insulating film and extends along the upper surface of the semiconductor substrate, and
• wherein the first middle portion of the capacitor insulating film extends along one side surface of the first electrode and connects the upper portion of the capacitor insulating film and the first lower portion of the capacitor insulating film;
• (c) a second electrode of the capacitor element formed over the capacitor insulating film so as to cover the upper portion, the first middle portion and the first lower portion of the capacitor insulating film,
• wherein an upper surface of the second electrode includes a first part, a second part and a third part in the cross section of the first direction,
• wherein the first part of the upper surface of the second electrode is disposed over the upper portion of the capacitor insulating film and overlaps the first electrode in plan view,
• wherein the second part of the upper surface of the second electrode is disposed over the first lower portion of the capacitor insulating film in plan view, and
• wherein the third part of the upper surface of the second electrode is disposed over the first middle portion of the capacitor insulating film and between the first part and the second part of the upper surface of the second electrode;
• (d) a first metal silicide film formed over the first part of the upper surface of the second electrode;
• (e) a second metal silicide film formed over the second part of the upper surface of the second electrode;
• and
• (f) a first insulating film formed over the third part of the upper surface of the second electrode so as to separate the first metal silicide film from the second metal silicide film,
• wherein the first insulating film extends from a position contacting the second metal silicide film to a position contacting the first metal silicide film, and
• wherein, on one side of the first electrode in the cross section of the first direction, one part of the first insulating film is located above the first middle portion of the capacitor insulating film in a second direction perpendicular to the upper surface of the semiconductor substrate.