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US 9,754,999 B1Granted
Vertical thin film transistors with surround gates
AssigneeSanDisk Technologies LLC
InventorsSeje Takaki, Manabu Hayashi, Ryousuke Itou, Takuro Maede, Kengo Kajiwara, Tetsuya Yamada, Yusuke Oda
Life of this patent
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Abstract
A method is provided that includes forming a transistor by forming a gate disposed in a first direction above a substrate, the gate including a first bridge portion and a second bridge portion, forming the first bridge portion extending in the first direction and disposed near a top of the gate, and forming the second bridge portion extending in the first direction and disposed near a bottom of the gate.
Claims20
A method comprising:
- forming a transistor by:
- forming a gate disposed in a first direction above a substrate, the gate comprising a first bridge portion and a second bridge portion;
- forming the first bridge portion extending in the first direction and disposed near a top of the gate;
- and
- forming the second bridge portion extending in the first direction and disposed near a bottom of the gate.
2 more elements
An apparatus comprising:
- a monolithic three-dimensional memory array comprising a vertically-oriented bit line select transistor comprising a gate disposed in a first direction above a substrate, the gate comprising:
- a first bridge portion extending in the first direction and disposed near a top of the gate;
- and
- a second bridge portion extending in the first direction and disposed near a bottom of the gate.
1 more element
A method comprising:
- forming a vertically-oriented bit line select transistor comprising a stack of semiconductor material above a substrate;
- forming a gate disposed on all sides of the stack of semiconductor material;
- forming a first bridge portion of the gate extending in a first direction and disposed near a top of the gate;
- and
- forming a second bridge portion of the gate extending in the first direction and disposed near a bottom of the gate.
2 more elements
Dependencies are inferred from the claim text.