Write current reduction in spin transfer torque memory devices
AssigneeIntel Corporation
InventorsBrian S. Doyle, David L. Kencke, Charles C. Kuo, Dmitri E. Nikonov, Robert S. Chau
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Abstract
The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element.
Claims3
A non-volatile memory device, comprising:
- a fixed magnetic layer electrode;
- a fixed magnetic layer adjacent the fixed magnetic layer electrode;
- a free magnetic layer electrode adjacent a free magnetic layer and electrically connected to a bit line, wherein the fixed magnetic layer and the fixed magnetic layer electrode have a maximum surface area smaller than a maximum surface area of the free magnetic layer, wherein the free magnetic layer is substantially oval and has a length and a width, and wherein the fixed magnetic layer and the fixed magnetic layer electrode extends as a stripe adjacent the fixed magnetic layer along the entire free magnetic layer length;
- a tunneling barrier layer disposed between the fixed magnetic layer and the free magnetic layer;
- and
- a transistor electrically connected to the fixed magnetic layer electrode, a source line, and a word line.
Dependencies are inferred from the claim text.