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US 9,754,978 B2Granted
Semiconductor device with U-shaped active portion
AssigneeSharp Kabushiki Kaisha
InventorsNaoki Ueda, Sumio Katoh
Life of this patent
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Abstract
A semiconductor device (1001) includes: a first transistor (10A) having a first channel length L1 and a first channel width W1; and a second transistor (10B) having a second channel length L2 and a second channel width W2, wherein the first transistor (10A) and the second transistor (10B) include an active layer formed from a common oxide semiconductor film, the first transistor (10A) is a memory transistor which is capable of being irreversibly changed from a semiconductor state where a drain current Isd depends on a gate voltage Vg to a resistor state where the drain current Isd does not depend on the gate voltage Vg, and the first channel length L1 is smaller than the second channel length L2.
Claims19
A semiconductor device, comprising:
- a substrate;
- a first transistor supported on the substrate, the first transistor having a first channel length L1 and a first channel width W1;
- and
- a second transistor supported on the substrate, the second transistor having a second channel length L2 and a second channel width W2, wherein
- the first transistor and the second transistor include an active layer made of a common oxide semiconductor film,
- the first transistor is a memory transistor which is capable of being irreversibly changed from a semiconductor state where a drain current lsd depends on a gate voltage Vg to a resistor state where the drain current lsd does not depend on the gate voltage Vg, and
- the first channel length L1 is smaller than the second channel length L2,
- each of the first transistor and the second transistor includes:
- a gate electrode,
- a gate insulating film covering the gate electrode,
- an active layer on the gate insulating film,
- a source electrode on the active layer and in contact with a portion of the active layer, and
- a drain electrode on the active layer and in contact with another portion of the active layer,
- in the first transistor, when viewed in a direction normal to the substrate, a first portion of the active layer which extends over the gate electrode with the gate insulating film interposed therebetween and which is between the source electrode and the drain electrode has a U-shape, and
- in the second transistor, when viewed in the direction normal to the substrate, a second portion of the active layer which extends over the gate electrode with the gate insulating film interposed therebetween and which is between the source electrode and the drain electrode has a rectangular shape.
12 more elements
A semiconductor device, comprising:
- a substrate;
- a first transistor supported on the substrate, the first transistor having a first channel length L1 and a first channel width W1;
- and
- a second transistor supported on the substrate, the second transistor having a second channel length L2 and a second channel width W2, wherein
- the first transistor and the second transistor include an active layer made of a common oxide semiconductor film,
- the first transistor is a memory transistor which is capable of being irreversibly changed to a resistor state where a drain current lsd does not depend on a gate voltage Vg, and
- the first channel width W1 is greater than the second channel width W2 and L1<L2,
- each of the first transistor and the second transistor includes:
- a gate electrode,
- a gate insulating film covering the gate electrode,
- an active layer on the gate insulating film,
- a source electrode on the active layer and in contact with a portion of the active layer, and
- a drain electrode on the active layer and in contact with another portion of the active layer,
- in the first transistor, when viewed in a direction normal to the substrate, a first portion of the active layer which extends over the gate electrode with the gate insulating film interposed therebetween and which is between the source electrode and the drain electrode has a U-shape, and
- in the second transistor, when viewed in the direction normal to the substrate, a second portion of the active layer which extends over the gate electrode with the gate insulating film interposed therebetween and which is between the source electrode and the drain electrode has a rectangular shape.
12 more elements
A semiconductor device, comprising:
- a substrate;
- a first transistor supported on the substrate, the first transistor having a first channel length L1 and a first channel width W1;
- and
- a second transistor supported on the substrate, the second transistor having a second channel length L2 and a second channel width W2,
- wherein the first transistor and the second transistor include an active layer made of a common oxide semiconductor film, wherein
- the first transistor is a memory transistor which is capable of being irreversibly changed from a semiconductor state where a drain current lsd depends on a gate voltage Vg to a resistor state where the drain current lsd does not depend on the gate voltage Vg,
- the first channel length L1 is smaller than the second channel length L2,
- the first transistor includes:
- a gate electrode,
- a gate insulating film covering the gate electrode,
- an active layer on the gate insulating film,
- a source electrode on the active layer and in contact with a portion of the active layer, and
- a drain electrode on the active layer and in contact with another portion of the active layer,
- when viewed in a direction normal to the substrate, a first portion of the active layer which extends over the gate electrode with the gate insulating film interposed therebetween and which is between the source electrode and the drain electrode has a U-shape, and
- the first transistor further includes an upper gate electrode above the active layer with an interlayer insulating layer interposed therebetween, the upper gate electrode arranged to overlap at least the first portion of the active layer when viewed in the direction normal to the substrate.
12 more elements
Dependencies are inferred from the claim text.