Thin film transistor, fabricating method thereof, array substrate and display device

A fabricating method of a thin film transistor comprising steps of:

• forming an inducing layer film and an oxide active layer film in contact therewith on a substrate, the oxide active layer film being provided above or below the inducing layer film;
• and
• heating the substrate subjected to the above step, crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer,
• wherein the step of forming an inducing layer film and an oxide active layer film in contact therewith on a substrate comprises:
• forming the inducing layer film and the oxide active layer film successively on the substrate, and
• wherein the step of crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer comprises:
• heating the substrate on which the inducing layer film and the oxide active layer film are successively formed, such that the oxide active layer film is crystallized through inducement of the inducing layer film to form a crystalline oxide active layer film, and the inducing layer film becomes an oxide inducing layer;
• and
• forming a pattern including the crystalline oxide active layer by a patterning process on the substrate subjected to the above step.

A fabricating method of a thin film transistor, comprising steps of:

• forming an inducing layer film and an oxide active layer film in contact therewith on a substrate, the oxide active layer film being provided above or below the inducing layer film;
• and
• heating the substrate subjected to the above step, crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer,
• wherein the step of forming an inducing layer film and an oxide active layer film in contact therewith on a substrate comprises:
• forming the inducing layer film and the oxide active layer film successively on the substrate, and
• wherein the step of crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer comprises:
• forming a patterned oxide active layer film by a patterning process on the substrate on which the inducing layer film and the oxide active layer film are successively formed;
• and
• heating the substrate subjected to the above step, such that the patterned oxide active layer film is crystallized through inducement of the inducing layer film to form a crystalline oxide active layer, and the inducing layer film becomes an oxide inducing layer.

A fabricating method of a thin film transistor, comprising steps of:

• forming an inducing layer film and an oxide active layer film in contact therewith on a substrate, the oxide active layer film being provided above or below the inducing layer film;
• and
• heating the substrate subjected to the above step, crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer,
• wherein the step of forming an inducing layer film and an oxide active layer film in contact therewith on a substrate comprises:
• forming the oxide active layer film and the inducing layer film successively on the substrate, and
• wherein the step of crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer comprises:
• heating the substrate on which the oxide active layer film and the inducing layer film are successively formed, such that the oxide active layer film is crystallized through inducement of the inducing layer film to form a crystalline oxide active layer film, and the inducing layer film becomes an oxide inducing layer film;
• and
• forming a pattern including the crystalline oxide active layer and the oxide inducing layer by a patterning process on the substrate subjected to the above step.

A fabricating method of a thin film transistor, comprising steps of:

• forming an inducing layer film and an oxide active layer film in contact therewith on a substrate, the oxide active layer film being provided above or below the inducing layer film, and forming a patterned inducing layer film and a patterned oxide active layer film by a patterning process;
• and
• heating the substrate subjected to the above step, crystallizing the patterned oxide active layer film through inducement of the patterned inducing layer film to form a crystalline oxide active layer,
• wherein the inducing layer film is made of metal having a hexagonal lattice structure or hexagonal lattice derived structure, and
• the step of forming the crystalline oxide active layer comprises:
• putting the substrate formed with the patterned inducing layer film and the patterned oxide active layer film in an atmosphere of oxygen-containing gas and heating the substrate, such that the patterned oxide active layer film becomes the crystalline oxide active layer under action of the patterned inducing layer film, and the patterned inducing layer film becomes an oxide inducing layer.