Back to results
US 9,754,969 B2Granted
Dual-material mandrel for epitaxial crystal growth on silicon
AssigneeInternational Business Machines Corporation
InventorsSanghoon Lee, Effendi Leobandung, Brent A. Wacaser
Life of this patent
Estimating the term…
Abstract
In one example, a method for fabricating a semiconductor device includes etching a layer of silicon to form a plurality of fins and growing layers of a semiconductor material directly on sidewalls of the plurality of fins, wherein the semiconductor material and surfaces of the sidewalls have different crystalline properties.
Claims15
A method for fabricating a semiconductor device, the method comprising:
- etching a layer of silicon to form a fin, wherein the etching comprises:
- depositing a hard mask over the layer of silicon, wherein the hard mask comprises a first material layer directly in contact with the layer of silicon and a second material layer directly in contact with the first material layer, wherein the first material layer and the second material layer are formed from different materials;
- patterning the hard mask to create a pattern, wherein the patterning removes portions of the hard mask, and wherein the etching removes portions of the layer of silicon that resided beneath the portions of the hard mask that were removed;
- forming a spacer along a sidewall of the fin;
- depositing a surface oxide over the spacer;
- removing the second material layer of the hard mask and the spacer in a manner that is selective to the first material layer of the hard mask and to the layer of silicon, wherein the removing exposes the sidewall;
- growing a semiconductor channel directly on the sidewall, wherein the semiconductor channel and the layer of silicon have different crystalline properties;
- and
- removing the surface oxide and the fin after growing semiconductor channel in a manner that is selective to the semiconductor channel.
6 more elements
A method for fabricating a semiconductor device, the method comprising:
- depositing a hard mask over a layer of silicon, wherein the hard mask comprises a first material layer directly in contact with the layer of silicon and a second material layer directly in contact with the first material layer;
- patterning the hard mask to create a pattern, wherein the patterning removes portions of the hard mask;
- etching portions of the layer of silicon that resided beneath the portions of the hard mask that were removed, to form a fin in the layer of silicon;
- forming a spacer along a sidewall of the fin;
- removing the second material layer of the hard mask and the spacer in a manner that is selective to the first material layer of the hard mask and to the layer of silicon, wherein the removing exposes the sidewall;
- growing a semiconductor channel directly on the sidewall;
- and
- removing the fin after growing semiconductor channel in a manner that is selective to the semiconductor channel.
5 more elements
Dependencies are inferred from the claim text.