Structure for integration of an III-V compound semiconductor on SOI

A method of forming a semiconductor structure, comprising:

• providing a semiconductor-on-insulator (SOI) substrate that includes, from bottom to top, a silicon or germanium handle substrate that is miscut from 2 degrees to 8 degrees towards the <111> crystallographic direction or the <100> crystallographic direction, an insulator layer and a top semiconductor layer;
• removing said top semiconductor layer from one region of the SOI substrate to expose a portion of said insulator layer, while maintaining a portion of said top semiconductor layer in another region of said SOI substrate;
• forming a trench in said exposed portion of said insulator layer of the SOI substrate;
• and
• epitaxially growing an III-V compound semiconductor pillar in said trench, wherein said III-V compound semiconductor pillar comprises a lower portion that has a first defect density and an upper portion that has a second defect density that is less than said first defect density.