Semiconductor on insulator (SOI) block with a guard ring
AssigneeNXP USA, Inc.
InventorsChi-Min Yuan, David R. Tipple
Life of this patent
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Abstract
A semiconductor device includes a bulk substrate of a first conductivity type, a first semiconductor on insulator (SOI) block in the bulk substrate, a first well of the first conductivity type in the first SOI block, a second well of a second conductivity type in the first SOI block, a first guard ring of the first conductivity type in the first SOI block around at least a portion of a periphery of the first SOI block, and a second guard ring of the second conductivity type in the first SOI block around at least a portion of the periphery of the first SOI block. The first conductivity type is different than the second conductivity type.
Claims12
A semiconductor device comprising:
- a bulk substrate of a first conductivity type;
- a first semiconductor on insulator (SOI) block in the bulk substrate;
- a first well of the first conductivity type in the first SOI block;
- a second well of a second conductivity type in the first SOI block;
- a first guard ring of the first conductivity type in the first SOI block around at least a portion of a periphery of the first SOI block;
- a second guard ring of the second conductivity type in the first SOI block around at least a portion of the periphery of the first SOI block, wherein the first conductivity type is different than the second conductivity type;
- a bottom oxide layer over the bulk substrate but not over the first and second guard rings;
- a first electronic device formed directly over a portion of the bottom oxide and the first well;
- and
- a second electronic device formed directly over another portion of the bottom oxide and the second well.
A semiconductor device comprising:
- a bulk substrate of a first conductivity type;
- a first semiconductor on insulator (SOI) block in the bulk substrate;
- a first well of the first conductivity type in the first SOI block;
- a second well of a second conductivity type in the first SOI block;
- a first guard ring of the first conductivity type in the first SOI block around at least a portion of a periphery of the first SOT block;
- a second guard ring of the second conductivity type in the first SOI block around at least a portion of the periphery of the first SOI block, wherein the first conductivity type is different than the second conductivity type;
- a second SOI block in the bulk silicon;
- a portion of the first and second guard rings are between the first SOI block and the second SOI block.
A semiconductor device comprising:
- an NMOS transistor formed on a first portion of an oxide layer, wherein the oxide layer is formed on a semiconductor on insulator (SOI) block of a bulk substrate;
- a PMOS transistor formed on a second portion of the oxide layer;
- a first doped ring formed in the bulk substrate and spaced at a distance from the SOI block;
- a second doped ring formed in the bulk substrate and spaced at a distance from the SOI block and the first guard ring;
- a first conductive trace connected between the first doped ring and a current electrode of the NMOS transistor;
- a second conductive trace connected between the second doped ring and a current electrode of the PMOS transistor.
Dependencies are inferred from the claim text.