Semiconductor memory device and method for manufacturing same

A semiconductor memory device, comprising:

• a substrate;
• a stacked body provided on the substrate, the stacked body including
• a plurality of insulating layers including a first insulating layer, the first insulating layer provided on the substrate and being in contact with the substrate, and
• a plurality of conductive layers stacked between the insulating layers and including a first conductive layer, the first conductive layer provided on the first insulating layer and being in contact with the first insulating layer;
• a first semiconductor film provided in the stacked body and extending in a stacking direction of the stacked body, the first semiconductor film having a cylindrical shape;
• a second semiconductor film provided integrally with the first semiconductor film, the second semiconductor film having a cylindrical shape, the second semiconductor film having a maximum thickness thicker than a maximum thickness of the first semiconductor film in a first direction crossing the stacking direction, an upper end portion of the second semiconductor film being in contact with a lower end portion of the first semiconductor film, the second semiconductor film having an upper face of the upper end portion of the second semiconductor film, a height of the upper face being lower than a height of the first conductive layer;
• and
• a first insulating film integrally provided between the first semiconductor film and the first conductive layer, and between the second semiconductor film and the first insulating layer, the first insulating film being disposed on an outer peripheral surface of the first semiconductor film and on an outer peripheral surface of the second semiconductor film, the first insulating film extending in the stacking direction, the first insulating film being in contact with the second semiconductor film, the first insulating film having a lower end portion, a height of the lower end portion of the first insulating film being lower than the height of the upper face of the second semiconductor film.