Non-volatile memory device

A non-volatile semiconductor storage device, comprising:

• a substrate;
• a first electrode film provided above the substrate;
• a second electrode film provided above the first electrode;
• a first silicon film extending in a first direction crossing a surface of the substrate, the first silicon film facing the first electrode film and the second electrode film;
• a second silicon film provided between the first electrode film and the first silicon film, the second silicon film continuously ringing the first silicon film;
• a third silicon film provided between the second electrode film and the first silicon film, the third silicon film continuously ringing the first silicon film;
• a first insulating film including parts provided between the second silicon film and the first silicon film, and between the third silicon film and the first silicon film;
• a second insulating film provided between the first electrode film and the second silicon film, the second insulating film continuously ringing the first silicon film;
• and
• a third insulating film provided between the second electrode film and the third silicon film, the third insulating film continuously ringing the first silicon film;
• wherein the second insulating film extends toward the first silicon film to overlap the second silicon film when being viewed along the first direction, and the third insulating film extends toward the first silicon film to overlap the third silicon film when being viewed along the first direction.