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US 9,754,950 B2Granted
Semiconductor device including transistor having offset insulating layers
AssigneeSK hynix Inc.
InventorsDong Hwan Lee, Min Gyu Koo, Hyun Heo
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Abstract
A semiconductor device includes a substrate having a memory array region and a peripheral region, isolation layers formed in the peripheral region to define an active region, offset insulating layers separated from each other and formed in the active region, and a gate electrode having edges overlapping with the offset insulating layers and arranged in the active region between the offset insulating layers.
Claims11
A semiconductor device, comprising:
- a substrate including a memory array region and a peripheral region;
- isolation layers formed in the peripheral region to define an active region;
- offset insulating layers separated from each other and formed in the active region;
- a gate electrode having edges overlapping with the offset insulating layers and arranged in the active region between the offset insulating layers;
- and
- a punch-through stop implantation portion formed at substantially the same level as bottoms of the offset insulating layers and formed between the offset insulating layers.
3 more elements
Dependencies are inferred from the claim text.