Single spacer for complementary metal oxide semiconductor process flow

A semiconductor device comprising:

• p-type FinFETs in a first device region and n-type FinFETs in a second device region of a substrate;
• a gate structure present on a channel portion for each of the fin structures for each of the p-type and n-type FinFETs;
• gate sidewall spacers of a low-k dielectric material present on the gate structures for each of the n-type FinFETs and the p-type FinFETs, wherein the gate sidewall spacers for each of the n-type and p-type FinFETs have substantially a same width, wherein the gate sidewall spacers for the n-type finFETs comprise a high-k dielectric fin liner material present at an interface of the gate sidewall spacers, and the fin structures;
• and
• source and drain epitaxial semiconductor material on the fin structures for each of the p-type FinFETs and the n-type FinFETs, wherein an oxide surface liner is present on exterior surfaces of the source and drain epitaxial semiconductor material of the p-type FinFETs that is not present on exterior surfaces of the source and drain epitaxial semiconductor material of the n-type FinFETs.

A semiconductor device comprising:

• p-type FinFETs in a first device region and n-type FinFETs in a second device region of a substrate;
• a gate structure present on a channel portion for each of the fin structures for each of the p-type and n-type FinFETs;
• gate sidewall spacers of a low-k dielectric material present on the gate structures for each of the n-type FinFETs and the p-type FinFETs, wherein the gate sidewall spacers for each of the n-type and p-type FinFETs have substantially a same width, wherein the gate sidewall spacers for the n-type finFETs comprise a high-k dielectric fin liner material present at an interface of the gate sidewall spacers, and the fin structures;
• and
• source and drain regions for the p-type FinFETs comprised of an epitaxial germanium containing material having an exterior surface that is oxidized, wherein an exterior surface of source and drains regions for the n-type FinFETs is not oxidized.