Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate

A method of forming a semiconductor structure, said method comprising:

• providing a plurality of silicon germanium alloy fins extending upwards from a surface of a substrate;
• forming, in any order, a germanium containing layer contacting exposed surfaces of each silicon germanium alloy fin of a first set of said silicon germanium alloy fins, and a silicon layer contacting exposed surfaces of each silicon germanium alloy fin of a second set of said silicon germanium alloy fins;
• and
• converting, at the same time and utilizing a thermal anneal process, an entirety of each silicon germanium alloy fin of said first set of said silicon germanium alloy fins and said germanium containing layer into a compressive strained silicon germanium alloy fin having a first germanium content, and an entirety of each silicon germanium alloy fin of said second set of said silicon germanium alloy fins and said silicon layer into a tensile strained silicon germanium alloy fin having a second germanium content that is less than said first germanium content.