Semiconductor device and method of fabricating the same

A method of fabricating a semiconductor device, comprising:

• providing a substrate, having a first region and a second region;
• forming a plurality of fin-shaped structures, respectively disposed in the first region and the second region of the substrate;
• forming a protection layer, conformally covering the substrate and the fin-shaped structures;
• forming an interlayer dielectric in the first region and the second region, wherein the protection layer in the first region and the second region is partially exposed from the interlayer dielectric;
• forming an etch mask, covering the fin-shaped structures in the second region;
• etching the protection layer exposed from the interlayer dielectric in the first region before removing the etch mask;
• growing an epitaxial layer on each of the fin-shaped structures exposed from the interlayer dielectric and in the first region after the step of etching the protection layer;
• depositing a dielectric layer, conformally covering each of the epitaxial layers in the first region and the etch mask in the second region;
• removing the etch mask and the dielectric layer in the second region;
• and
• etching the protection layer exposed from the interlayer dielectric and in the second region before removing the dielectric layer in the first region.

A method of fabricating a semiconductor device, comprising:

• providing a substrate, having a first region and a second region;
• forming a plurality of fin-shaped structures, respectively disposed in the first region and the second region of the substrate;
• forming a protection layer, conformally covering the substrate and the fin-shaped structures;
• forming an interlayer dielectric in the first region and the second region, wherein the protection layer in the first region and the second region is partially exposed from the interlayer dielectric;
• forming an etch mask, covering the fin-shaped structures in the second region;
• etching the protection layer exposed from the interlayer dielectric in the first region before removing the etch mask;
• growing an epitaxial layer on each of the fin-shaped structures exposed from the interlayer dielectric and in the first region after the step of etching the protection layer;
• and
• growing a plurality of another epitaxial layers, respectively disposed on the epitaxial layers in the first region and on the fin-shaped structures in the second region.