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US 9,754,936 B2Granted
Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSuehye Park, Yoonhae Kim, Deokhan Bae, Jaeran Jang, Hwichan Jun
Life of this patent
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Abstract
A semiconductor device includes a substrate provided with active patterns, gate electrodes extending across the active patterns, source/drain regions provided in upper portions of the active patterns between the gate electrodes, respectively, and first contacts and second contacts provided between the gate electrodes and electrically connected to the source/drain regions, respectively. The first and second contacts are disposed in such a way that a contact center line thereof is spaced apart from a corresponding gate center line by first and second distances. The first distance differs from the second distance.
Claims19
A semiconductor device, comprising:
- a substrate having active patterns and source/drain regions in upper portions of the active patterns;
- gate electrodes crossing the active patterns in a first direction, the gate electrodes being spaced from each other in a second direction perpendicular to the first direction;
- and
- a set of first contacts and a set of second contacts, the first and second contacts being electrically connected to the source/drain regions, respectively,
- wherein the source/drain regions and the first and second contacts connected thereto are located between the gate electrodes as viewed in plan,
- the set of second contacts are offset, in the second direction, relative the gate electrodes by an amount different from that by which the set of first contacts are offset relative to the gate electrodes in the second direction, and
- bottom surfaces of the first contacts are disposed at a different level in the device from bottom surfaces of the second contacts.
4 more elements
The A semiconductor device, comprising:
- a substrate having at least one active pattern and source/drain regions at upper portions of each said at least one active pattern;
- gate electrodes extending longitudinally in a first direction parallel to a top surface of the substrate and crossing the at least one active pattern;
- at least one first contact electrically connected to a respective one of the source/drain regions;
- a set of second contacts each electrically connected to a respective one of the source/drain regions, and
- wherein the gate electrodes are uniformly spaced from each other in a second direction parallel to the top surface of the substrate and perpendicular to the first direction,
- the source/drain regions are interposed between the gate electrodes as viewed in plan,
- each said at least one of the first contacts is interposed between adjacent gate electrodes of a respective pair of the gate electrodes,
- each of the second contacts is interposed between adjacent gate electrodes of a respective pair of the gate electrodes,
- the set of second contacts is offset, in the second direction, relative the gate electrodes by an amount different from that by which the at least one first contact is offset relative to the gate electrodes in the second direction,
- each said at least one first contact is disposed midway between the adjacent gate electrodes of the respective pair of gate electrodes between which the first contact is interposed,
- each of the second contacts is located closer to one of the adjacent gate electrodes than the other of the adjacent gate electrodes of the respective pair of gate electrodes between which the second contact is interposed,
- the gate electrodes comprise gates of transistors and dummy gates that are electrically isolated in the device so as to be electrically inactive in the device, and
- each said one of the adjacent gate electrodes, located closer to one of the second contacts than the said other of the gate electrodes, comprises a respective one of said dummy gates.
10 more elements
A semiconductor device, comprising:
- a substrate having at least one active pattern and source/drain regions at upper portions of each said at least one active pattern;
- gate electrodes extending longitudinally in a first direction parallel to a top surface of the substrate and crossing the at least one active pattern;
- at least one first contact electrically connected to a respective one of the source/drain regions;
- a set of second contacts each electrically connected to a respective one of the source/drain regions, and
- wherein the gate electrodes are uniformly spaced from each other in a second direction parallel to the top surface of the substrate and perpendicular to the first direction,
- the source/drain regions are interposed between the gate electrodes as viewed in plan,
- each said at least one of the first contacts is interposed between adjacent gate electrodes of a respective pair of the gate electrodes,
- each of the second contacts is interposed between adjacent gate electrodes of a respective pair of the gate electrodes,
- the set of second contacts is offset, in the second direction, relative the gate electrodes by an amount different from that by which the at least one first contact is offset relative to the gate electrodes in the second direction,
- the entirety of each said at least one first contact is disposed on the source/drain region to which the first contact is electrically connected, and
- one part of each of the second contacts is disposed on the source/drain region to which the second contact is electrically connected, and another part of each of the second contacts is disposed on a channel region interposed between respective ones of the source/drain regions.
8 more elements
Dependencies are inferred from the claim text.