Positive strike SCR, negative strike SCR, and a bidirectional ESD structure that utilizes the positive strike SCR and the negative strike SCR
AssigneeTexas Instruments Incorporated
InventorsHenry Litzmann Edwards, Akram A. Salman, Md Iqbal Mahmud
Life of this patent
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Abstract
A first silicon controlled rectifier has a breakdown voltage in a first direction and a breakdown voltage in a second direction. A second silicon controlled rectifier has a breakdown voltage with a higher magnitude than the first silicon controlled rectifier in the first direction, and a breakdown voltage with a lower magnitude than the first silicon controlled rectifier in the second direction. A bidirectional electrostatic discharge (ESD) structure utilizes both the first silicon controlled rectifier and the second silicon controlled rectifier to provide bidirectional protection.
Claims5
A method of forming an electrostatic discharge (ESD) structure comprising:
- forming first and second wells each having a first conductivity type, the first and second wells separated by a deep region having a second conductivity type;
- forming first and second source regions in the first and second wells respectively, the first and second source regions each having the second conductivity type;
- forming a first contact region in the first well and laterally surrounding and abutting the first source region, the first contact region having the first conductivity type;
- and
- forming a second contact region in the second well and laterally surrounded by the second source region, the second contact region having the first_conductivity type.
Dependencies are inferred from the claim text.