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US 9,754,922 B2Granted
3D integration using Al—Ge eutectic bond interconnect
AssigneeInvenSense, Inc.
InventorsPeter Smeys, Mozafar Maghsoudnia
Life of this patent
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Abstract
Provided herein is an apparatus including a first CMOS wafer and a second CMOS wafer. A number of eutectic bonds connect the first CMOS wafer to the second CMOS wafer. The eutectic bond includes combinations where the eutectic bonding temperature is lower than the maximum temperature a CMOS circuit can withstand without being damaged during processing.
Claims18
An apparatus comprising:
- a first CMOS wafer;
- a second CMOS wafer including a depression within a surface of the second CMOS wafer, wherein the depression includes an aluminum surface;
- and
- a eutectic bond connecting the first CMOS wafer to the second CMOS wafer, wherein
- the eutectic bond includes aluminum and germanium,
- the eutectic bond has a melting point which is lower than the melting point of aluminum and the melting point of germanium, and
- the eutectic bond includes the aluminum surface.
4 more elements
An apparatus comprising:
- a first feature on a first CMOS wafer, wherein the first feature is a standoff with a height;
- a second feature on a second CMOS wafer, wherein the second feature is a depression with a depth, wherein the height is greater than the depth;
- and
- a eutectic bond connecting the first feature to the second feature, wherein the eutectic bond has a melting point which is lower than the melting point of the first feature and the melting point of the second feature.
1 more element
An apparatus comprising:
- a first CMOS wafer;
- a second CMOS wafer including a depression within a surface of the second CMOS wafer, wherein the depression includes a germanium surface;
- and
- a eutectic bond connecting the first CMOS wafer to the second CMOS wafer, wherein
- the eutectic bond includes aluminum and germanium,
- the eutectic bond includes a melting point which is lower than the melting point of aluminum and the melting point of germanium;
- and
- the eutectic bond includes the germanium surface.
5 more elements
An apparatus comprising:
- a first feature on a first CMOS wafer;
- a second feature on a second CMOS wafer;
- and
- a eutectic bond connecting the first feature to the second feature, wherein
- the eutectic bond includes a melting point which is lower than the melting point of the first feature and the melting point of the second feature, and
- a width of the eutectic bond is narrower than a width of the second feature.
3 more elements
Dependencies are inferred from the claim text.