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US 9,754,916 B2Granted
Semiconductor device, semiconductor package, and method for manufacturing semiconductor device
AssigneeStmicroelectronics Pte Ltd
InventorJing-En Luan
Life of this patent
Estimating the term…
Abstract
Embodiments of the present disclosure provide a semiconductor device, a semiconductor package, and a method for manufacturing a semiconductor device. The semiconductor device comprises: a semiconductor die; an electrical isolation layer formed on a surface of the semiconductor die; a substrate; and a non-conductive adhesive layer disposed between the electrical isolation layer and the substrate, so as to adhere the electrical isolation layer to the substrate.
Claims18
A method for manufacturing a semiconductor device, comprising:
- forming an electrical isolation layer on a surface of a semiconductor wafer, the electrical isolation layer abutting the semiconductor wafer;
- attaching an adhesive layer to the electrical isolation layer;
- dicing the semiconductor wafer and the electrical isolation layer to form a monolithic structure, the monolithic structure comprising a semiconductor die;
- and
- adhering the monolithic structure to a substrate via the adhesive layer, wherein the adhesive layer is disposed between the electrical isolation layer and the substrate, the electrical isolation layer being harder than the adhesive layer,
- wherein the attaching of the adhesive layer occurs in time sequence after the dicing of the wafer, and the adhesive layer is attached to the electrical isolation layer when it is in the form of the monolithic structure of the semiconductor die.
3 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an electrical isolation layer on a surface of a semiconductor wafer, the electrical isolation layer abutting the semiconductor wafer;
- attaching an adhesive layer to the electrical isolation layer;
- dicing the semiconductor wafer and the electrical isolation layer to form a monolithic structure, the monolithic structure comprising a semiconductor die;
- and
- adhering the monolithic structure to a substrate via the adhesive layer, wherein the adhesive layer is disposed between the electrical isolation layer and the substrate, the electrical isolation layer being harder than the adhesive layer,
- wherein the attaching of the adhesive layer occurs in time sequence before the dicing of the wafer and the dicing of the semiconductor wafer includes dicing the semiconductor wafer, the electrical isolation layer, and the adhesive layer in a single step to form the monolithic structure, the monolithic structure comprising the semiconductor die.
3 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an electrical isolation layer on a surface of a semiconductor wafer, the electrical isolation layer abutting the semiconductor wafer;
- attaching an adhesive layer to the electrical isolation layer;
- dicing the semiconductor wafer and the electrical isolation layer to form a monolithic structure, the monolithic structure comprising a semiconductor die;
- adhering the monolithic structure to a substrate via the adhesive layer, wherein the adhesive layer is disposed between the electrical isolation layer and the substrate, the electrical isolation layer being harder than the adhesive layer;
- and
- encapsulating the monolithic structure and the substrate with a molding compound to form a package.
3 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an electrical isolation layer on a surface of a semiconductor wafer, the electrical isolation layer abutting the semiconductor wafer;
- dicing the semiconductor wafer and the electrical isolation layer to form a monolithic structure, the monolithic structure comprising a semiconductor die;
- and
- adhering the monolithic structure to a substrate using an adhesive glue, wherein the adhesive glue is disposed between the electrical isolation layer and the substrate, the electrical isolation layer being harder than the adhesive glue,
- wherein the adhering of the monolithic structure to the substrate occurs in time sequence after the dicing of the semiconductor wafer, and the adhesive glue is attached to the electrical isolation layer when it is in the form of the monolithic structure of the semiconductor wafer.
2 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an electrical isolation layer on a surface of a semiconductor wafer, the electrical isolation layer abutting the semiconductor wafer;
- dicing the semiconductor wafer and the electrical isolation layer to form a monolithic structure, the monolithic structure comprising a semiconductor die;
- and
- adhering the monolithic structure to a substrate using an adhesive glue, wherein the adhesive glue is disposed between the electrical isolation layer and the substrate, the electrical isolation layer being harder than the adhesive glue,
- wherein the adhering of the monolithic structure to the substrate occurs in time sequence before the dicing of the wafer and the dicing of the semiconductor wafer includes dicing the semiconductor wafer, the electrical isolation layer, and the adhesive glue in a single step to form the monolithic structure, the monolithic structure comprising the semiconductor die.
2 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an electrical isolation layer on a surface of a semiconductor wafer, the electrical isolation layer abutting the semiconductor wafer;
- dicing the semiconductor wafer and the electrical isolation layer to form a monolithic structure, the monolithic structure comprising a semiconductor die;
- adhering the monolithic structure to a substrate using an adhesive glue, wherein the adhesive glue is disclosed between the electrical isolation layer and the substrate, the electrical isolation layer being harder than the adhesive glue;
- and
- encapsulating the monolithic structure and the substrate with a molding compound to form a package.
2 more elements
A method, comprising:
- forming an electrical isolation layer on a surface of a semiconductor wafer, the electrical isolation layer abutting the semiconductor die and having a Rockwell hardness E scale value of at least 52;
- attaching an adhesive layer to the electrical isolation layer;
- dicing the semiconductor wafer, the electrical isolation layer, and the adhesive layer to form a monolithic structure, the monolithic structure comprising a semiconductor die;
- and
- adhering the monolithic structure to a substrate via the adhesive layer, wherein the adhesive layer is disposed between the electrical isolation layer and the substrate, the electrical isolation layer being harder than the adhesive layer.
2 more elements
Dependencies are inferred from the claim text.