Backside fib probing detector in a forward and reverse body biasing architecture
AssigneeSTMicroelectronics (Rousset) SAS
InventorsMathieu Lisart, Nicolas Borrel
Life of this patent
Estimating the term…
Abstract
An integrated circuit including a plurality of first semiconductor strips of a first conductivity type and of second semiconductor strips of a second conductivity type arranged in alternated and contiguous fashion on a region of the second conductivity type, including for each of the first strips: a plurality of bias contacts; for each bias contact, a switch capable of applying a potential on the bias contact; two detection contacts arranged at the ends of the first strip; and a detection circuit having its activation causing the turning off of the switches and the comparison with a threshold of the resistance between the detection contacts.
Claims22
An integrated circuit comprising a plurality of first semiconductor strips of a first conductivity type and a plurality of second semiconductor strips of a second conductivity type arranged in alternated and contiguous fashion on a region of the second conductivity type, comprising for each of the first semiconductor strips:
- a plurality of bias contacts;
- a plurality of switches, wherein each switch is associated with a respective bias contact, each switch capable of applying a potential on the respective bias contact;
- two detection contacts arranged at ends of the first semiconductor strip;
- and
- a detection circuit configured to control the switches and to compare a resistance between the detection contacts with a reference threshold.
An integrated circuit comprising:
- a semiconductor substrate having a first conductivity type;
- a semiconductor layer overlying the semiconductor substrate and having a second conductivity type opposite the first conductivity type;
- a semiconductor region overlying the semiconductor layer, the semiconductor region including a plurality of n-doped strips interdigitated with a plurality of p-doped strips;
- a plurality of bias contacts disposed within the semiconductor region;
- a plurality of switches, wherein each switch is associated with a respective bias contact, each switch capable of applying a potential on the respective bias contact;
- a plurality of detection contacts arranged at ends of strips that include bias contacts;
- and
- a plurality of detection circuits, each detection circuit configured to control at least one associated switch and to compare a resistance between the detection contacts of the associated strip with a reference threshold.
An integrated circuit, comprising:
- a plurality of first semiconductor strips of a first conductivity type;
- a plurality of second semiconductor strips of a second conductivity type interdigitated with the plurality of first semiconductor strips, wherein each of the first semiconductor strips comprises:
- a first detection contact at a first end of the first semiconductor strip;
- a second detection contact at a second end of the first semiconductor strip;
- a bias contact disposed between the first detection contact and the second detection contact along a length-wise direction of the first semiconductor strip;
- and
- a switch coupled between the bias contact and a bias potential;
- and
- a detection circuit configured to determine a resistance of the first semiconductor strip between the first detection contact and the second detection contact based on a test signal.
Dependencies are inferred from the claim text.