Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorMin-Su Kim
Life of this patent
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Abstract
A semiconductor device includes a first power rail, a second power rail, at least one standard cell and at least one power bridge. The first power rail extends in a first direction over a substrate. The second power rail extends in the first direction over the substrate, and the second power rail is spaced apart from the first power rail in a second direction that intersects the first direction. The at least one standard cell receives a first voltage from the first and the second power rails. The at least one power bridge connects the first power rail and the second power rail in the second direction. The first power rail and the second power rail are formed in a first metal layer and the least one power bridge is formed in a bottom metal layer that is under the first metal layer.
Claims16
A semiconductor device, comprising:
- a first power rail extending in a first direction over a substrate having a first conductive type;
- a second power rail extending in the first direction over the substrate, the second power rail being spaced apart from the first power rail by a predetermined distance in a second direction that intersects the first direction;
- at least one standard cell receiving a first voltage from the first power rail and the second power rail;
- and
- at least one power bridge configured to connect the first power rail and the second power rail in the second direction within the at least one standard cell,
- wherein the first power rail and the second power rail are formed in a first metal layer and the least one power bridge is formed in a bottom metal layer that is under the first metal layer, and
- wherein the at least one standard cell has a cell boundary defined by the first power rail and the second power rail.
A semiconductor device, comprising:
- a first power rail extending in a first direction over a substrate in a first metal layer;
- a second power rail extending in the first direction over the substrate in the first metal layer, the second power rail being spaced apart from the first power rail in a second direction that intersects with the first direction;
- a third power rail extending in the first direction over the substrate between the first power rail and the second power rail;
- and
- at least one power bridge extending in the second direction in a second metal layer below the first metal layer and configured to connect the first and second power rails in at least one standard cell,
- wherein the at least one standard cell has a cell boundary defined by the first power rail and the second power rail and receives a first voltage from the first power rail and the second power rail.
Dependencies are inferred from the claim text.