Method of manufacturing semiconductor device and semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a metal silicide film over a semiconductor substrate;
• forming an interlayer insulating film over the semiconductor substrate to cover the metal silicide film;
• forming a first contact hole of a first depth, the first contact hole penetrating the interlayer insulating film and reaching the metal silicide film;
• forming a second contact hole of a second depth deeper than the first depth, the second contact hole penetrating the interlayer insulating film and reaching the semiconductor substrate;
• forming a barrier metal film in each of the first contact hole and the second contact hole;
• and
• forming a plug to fill each of the first contact hole and the second contact hole,
• wherein the step of forming a barrier metal film includes the steps of
• forming a first barrier metal film, and
• forming a second barrier metal film so as to be in contact with the first barrier metal film,
• wherein the step of forming a first barrier metal film includes the steps of
• supplying a mixed gas of titanium tetrachloride (TiCl4) and hydrogen (H2) under such conditions that partial pressure of the titanium tetrachloride is 3 Pa or higher and the product of the partial pressure of the titanium tetrachloride and supply time is greater than 800 Pa·second, and
• forming a titanium film as the first barrier metal film in a plasma atmosphere using an inorganic source of titanium as a source material,
• wherein in the step of forming a second barrier metal film, a metal nitride film is formed.