Designed-based interconnect structure in semiconductor structure

A semiconductor structure, comprising:

• a plurality of gate structures extending in a first direction formed over a substrate;
• and
• a contact formed adjacent to the gate structures over the substrate,
• wherein the gate structures and the contact follow the following equation:
• W
• contact
• ≥
• 1.4
• ⁢
• ⁢
• L
• gate
• ⁢
• ⁢
• min
• -
• 30
• <
• 0.2
• ⁢
• ⁢
• P
• gate
• ⁢
• ⁢
• min
• +
• 0.35
• ⁢
• ⁢
• L
• gate
• ⁢
• ⁢
• min
• +
• 0.3
• ⁢
• ⁢
• H
• gate
• ⁢
• ⁢
• min
• -
• 20
• 0.2
• ⁢
• ⁢
• L
• gate
• ⁢
• ⁢
• min
• +
• 0.8
• ⁢
• ⁢
• H
• gate
• ⁢
• ⁢
• min
• -
• 5
• ×
• 0.3
• ⁢
• ⁢
• L
• gate
• ⁢
• ⁢
• min
• +
• 0.3
• ⁢
• ⁢
• H
• gate
• ⁢
• ⁢
• min
• +
• 5
• 38
• ≤
• 0.32
• wherein Wcontact is a contact width of the contact;
• Lgate min is the minimum value among gate lengths of the gate structures;
• Pgate min is the minimum value among gate pitches of the gate structures;
• and
• Hgate min is the minimum value among gate heights of the gate structures.

A semiconductor structure, comprising:

• a plurality of gate structures formed over a substrate;
• and
• a plurality of metal layers formed over the gate structures, wherein the metal layers comprise:
• a first metal layer comprising first metal lines extending in a first direction substantially parallel to the gate structures;
• a first type metal layer comprising metal lines extending in the first direction;
• and
• a second type metal layer comprising metal lines extending in a second direction substantially perpendicular to the first direction,
• wherein a distance between the first metal layer and the substrate is smaller than a distance between the first type metal layer and the substrate, and pitches of the first metal lines follow the following equation:
• P1st metal line min0.5Pgate min+0.55Lgate min+0.18Hgate min,
• wherein P1st metal line min is the minimum value among pitches of the first metal lines of the first metal layer;
• Pgate min is the minimum value among all gate pitches of the gate structures;
• Lgate min is the minimum value among all gate lengths of the gate structures;
• and
• Hgate min is the minimum value among all gate heights of the gate structures.