Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsYukio Takahashi, Hitoshi Matsuura
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a semiconductor substrate having a main surface; a first insulating film formed in a convex shape and provided on the main surface of the semiconductor substrate; a first diffusion layer formed on the semiconductor substrate and provided to surround the first insulating film formed in a convex shape, the first diffusion layer being different in conductivity type from the semiconductor substrate; a first conductive layer formed so as to extend across the first insulating film formed in a convex shape, the first conductive layer forming a fuse element; and a second insulating film provided on the first conductive layer.
Claims20
A semiconductor device comprising:
- a semiconductor substrate having a main surface;
- a first insulating film formed in a convex shape and provided on the main surface of the semiconductor substrate;
- a first diffusion layer formed on the semiconductor substrate and provided to surround the first insulating film formed in a convex shape, the first diffusion layer being different in conductivity type from the semiconductor substrate;
- a first conductive layer formed so as to extend across the first insulating film formed in a convex shape, the first conductive layer forming a fuse element;
- and
- a second insulating film provided on the first conductive layer;
- wherein the semiconductor device includes a power transistor element electrically connected to the first conductive layer.
A semiconductor device comprising:
- a power transistor element;
- and
- a non-trimming element including a fuse element used for adjusting the transistor element,
- the fuse element including
- a semiconductor substrate having a main surface,
- a first insulating film formed in a convex shape and provided on the main surface of the semiconductor substrate,
- a first diffusion layer formed on the semiconductor substrate and provided to surround the first insulating film formed in a convex shape, the first diffusion layer being different in conductivity type from the semiconductor substrate,
- a first conductive layer formed so as to extend across the first insulating film formed in a convex shape, the first conductive layer forming a fuse element, and
- a second insulating film provided on the first conductive layer,
- the power transistor element being electrically connected to the first conductive layer and having a drain or a collector, to which a high voltage is applied, and
- the first diffusion layer being set at an electric potential of a ground voltage or about the ground voltage.
A semiconductor device comprising:
- a semiconductor substrate having a main surface;
- a first insulating film formed in a convex shape and provided on the main surface of the semiconductor substrate;
- a first diffusion layer formed on the semiconductor substrate and provided to surround the first insulating film formed in a convex shape, the first diffusion layer being different in conductivity type from the semiconductor substrate;
- a first conductive layer formed so as to extend across the first insulating film formed in a convex shape, the first conductive layer forming a fuse element;
- a second insulating film provided on the first conductive layer;
- and
- a termination structure that has a second diffusion layer formed in a ring shape and provided for suppressing an electric field concentration, wherein the second diffusion layer and the first diffusion layer are formed in an identical step.
Dependencies are inferred from the claim text.