Semiconductor device and semiconductor device manufacturing method
AssigneeLapis Semiconductor Co., Ltd.
InventorKenichirou Kusano
Life of this patent
Estimating the term…
Abstract
A semiconductor device including: a fuse element; and a fuse window that is formed above a region including the fuse element, that includes a pair of first sidewalls extending in a first direction running along a direction that current flows in the fuse element and a pair of second sidewalls extending in a second direction intersecting the first direction, and that is formed with a projection projecting out from a sidewall side toward the inside at an inner wall of at least one out of the first sidewalls or the second sidewalls, the projection having a sidewall side width that is narrower than a projecting side width.
Claims12
A semiconductor device comprising:
- a fuse element;
- and
- a fuse window that is formed above a region including the fuse element, that includes a pair of first sidewalls extending in a first direction running along a direction that current flows in the fuse element and a pair of second sidewalls extending in a second direction intersecting the first direction, and that is formed with a projection projecting out from a sidewall side toward the inside at an inner wall of at least one out of the first sidewalls or the second sidewalls, the projection having a sidewall side width that is narrower than a projecting side width.
A semiconductor device comprising:
- a fuse element;
- and
- a fuse window that is formed above a region including the fuse element, that includes a pair of first sidewalls extending in a first direction running along a direction that current flows in the fuse element and a pair of second sidewalls extending in a second direction intersecting the first direction, and that is formed with a projection projecting out from a sidewall side toward the inside at an inner wall of at least one out of the first sidewalls or the second sidewalls, the projection having a sidewall side width that is shorter than a sidewall length from a sidewall end portion to the projection and that is the same as an inner side width of the projection.
A method for manufacturing semiconductor device, the method comprising:
- forming a first protective film onto a region covering a region including a fuse element;
- removing the first protective film on a region including the fuse element, and forming a fuse window that is formed above the region including the fuse element, that includes a pair of first sidewalls extending in a first direction running along a direction that current flows in the fuse element and a pair of second sidewalls extending in a second direction intersecting the first direction, and that is formed with a projection projecting out from a sidewall side toward the inside at an inner wall of at least one out of the first sidewalls or the second sidewalls, the projection having a sidewall side width that is narrower than a projecting side width;
- and
- forming a second protective film onto a region covering the first protective film and the inside of the fuse window.
Dependencies are inferred from the claim text.