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US 9,754,874 B2Granted
Inductive capacitive structure and method of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiao-Tsung Yen, Cheng-Wei Luo
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Abstract
An inductive capacitive structure including a first substrate, a first conductive line over the first substrate, a first shielding layer over the first substrate and a second substrate over the first substrate.
Claims20
An inductive capacitive structure comprising:
- a first substrate;
- a first conductive line over the first substrate;
- a first shielding layer over the first substrate;
- a second substrate over the first substrate;
- a first gate layer between the first substrate and the second substrate;
- and
- a second shielding layer over the second substrate.
4 more elements
An inductive capacitive structure comprising:
- a first substrate;
- a second substrate over the first substrate;
- a first gate layer over the second substrate;
- a first conductive line over the second substrate;
- and
- a first shielding layer over the second substrate.
3 more elements
A method of making an inductive capacitive structure, the method comprising:
- forming a first conductive structure over one of a first substrate or a second substrate, wherein the first conductive structure is an inductor or a transmission line;
- forming a first shielding structure over one of the first substrate or the second substrate;
- forming a first gate layer over one of the first substrate or the second substrate;
- forming a second shielding structure over the other of the first substrate or the second substrate;
- and
- bonding the second substrate to the first substrate.
3 more elements
Dependencies are inferred from the claim text.