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US 9,754,863 B2Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsSota Watanabe, Hiroaki Furihata, Makoto Imai
Life of this patent
Estimating the term…
Abstract
The semiconductor device improves heat dissipation by loading a diode and a MOSFET or IGBT in a single package. A drain electrode disposed on a rear surface of a MOSFET chip is soldered to an upper surface of a first lead frame, and a cathode electrode disposed on a rear surface of a diode chip is soldered to an upper surface of a second lead frame. Rear surfaces of the first lead frame and second lead frame to which neither the diode chip nor the MOSFET chip is connected are disposed so as to be exposed from a sealing resin.
Claims19
A semiconductor device, comprising:
- a first lead frame;
- and
- a second lead frame,
- wherein the first lead frame has a first terminal,
- a second lead frame has a second terminal,
- one of principal surfaces of the first lead frame has a first semiconductor chip,
- one of principal surfaces of the second lead frame has a second semiconductor chip,
- a first electrode disposed on a front surface of the first semiconductor chip is electrically connected to the principal surface of the second lead frame by a bonding wire,
- a front surface of the second semiconductor chip has a second electrode and a third electrode,
- the second electrode is electrically connected to a third terminal and a fourth terminal by bonding wires,
- the third electrode is electrically connected to a fifth terminal by a bonding wire, and
- another of the principal surfaces of the first lead frame and another of the principal surfaces of the second lead frame are disposed so as to be exposed from a sealing resin.
9 more elements
A semiconductor device, comprising:
- a first lead frame;
- and
- a second lead frame,
- wherein the first lead frame has a first terminal,
- a second lead frame has a second terminal,
- one of principal surfaces of the fourth lead frame has a first semiconductor chip,
- one of principal surfaces of the second lead frame has a second semiconductor chip and a third semiconductor chip,
- a first electrode disposed on a front surface of the first semiconductor chip is electrically connected to the principal surface of the second lead frame by a bonding wire,
- a front surface of the first semiconductor chip has a second electrode and a third electrode,
- a front surface of the second semiconductor chip has a fourth electrode,
- the second electrode is electrically connected a third terminal and a fourth terminal by bonding wires,
- the second electrode is electrically connected to a fifth terminal by a bonding wire,
- the fourth electrode is electrically connected to the second electrode by a bonding wire, and
- another of the principal surfaces of the second lead frame and another of the principal surfaces of the second lead frame are disposed so as to be exposed from a sealing resin.
11 more elements
A semiconductor device, comprising:
- a first lead frame;
- and
- a second lead frame,
- wherein the second lead frame has a first terminal,
- one of principal surfaces of the first lead frame has a first semiconductor chip,
- one of principal surfaces of the second lead frame has a second semiconductor chip,
- a first electrode disposed on a front surface of the first semiconductor chip is electrically connected to the principal surface of the second lead frame by a bonding wire,
- a front surface of the second semiconductor chip has a second electrode and a third electrode,
- the second electrode is electrically connected to a second terminal and a third terminal by bonding wires,
- the third electrode is electrically connected to a fourth terminal by a bonding wire, and
- another of the principal surfaces of the first lead frame and another of the principal surfaces of the second lead frame are disposed so as to be exposed from a sealing resin.
8 more elements
A semiconductor device, comprising:
- a first lead frame;
- and
- a second lead frame,
- wherein the second lead frame has a first terminal,
- one of principal surfaces of the first lead frame has a first semiconductor chip,
- one of principal surfaces of the second lead frame has a second semiconductor chip and a third semiconductor chip,
- a first electrode disposed on a front surface of the first semiconductor chip is electrically connected to the principal surface of the second lead frame by a bonding wire,
- a front surface of the second semiconductor chip has a second electrode and a third electrode,
- a front surface of the third semiconductor chip has a fourth electrode,
- the second electrode is electrically connected to a second terminal and a third terminal by bonding wires,
- the third electrode is electrically connected to a fourth terminal by a bonding wire,
- the fourth electrode is electrically connected to the second electrode by a bonding wire, and
- another of the principal surfaces of the second lead frame and another of the principal surfaces of the first lead frame are disposed so as to be exposed from a sealing resin.
10 more elements
A semiconductor device, comprising:
- a first lead frame;
- and
- a second lead frame,
- wherein the second lead frame has a first terminal,
- one of principal surfaces of the first lead frame has a first semiconductor chip,
- one of principal surfaces of the second lead frame has a second semiconductor chip,
- a first electrode disposed on a front surface of the second semiconductor chip is electrically connected to the principal surface of the second lead frame a by a bonding wire,
- a front surface of the second semiconductor chip has a second electrode,
- the second electrode is electrically connected to a second terminal by a bonding wire, and
- another of the principal surfaces of the first lead frame and another of the principal surfaces of the second lead frame are disposed so as to be exposed from a sealing resin.
7 more elements
Dependencies are inferred from the claim text.