Redistribution layer contacting first wafer through second wafer

An integrated circuit package comprising:

• a first semiconductor wafer portion having a first plurality of active devices in a first active device layer, a first interconnect layer having a first plurality of conductive structures in communication with the first plurality of active devices, and a first insulator layer disposed between the first active device layer and a substrate layer of the first semiconductor wafer portion;
• and
• a second semiconductor wafer portion bonded face-to-face with the first semiconductor wafer portion, the second semiconductor wafer portion having a second plurality of active devices in a second active device layer and having a second plurality of conductive structures in communication with the second plurality of active devices, the second semiconductor wafer portion further having a redistribution layer electrically coupling the first plurality of conductive structures with the second plurality of conductive structures, the redistribution layer including a metal layer having a horizontal extent from a first conductive bump to a second conductive bump, wherein the first conductive bump and the second conductive bump are disposed on the redistribution layer at the back side of the second semiconductor wafer portion.